| PART |
Description |
Maker |
| NDL7502P NDL7503P NDL7503P1 NDL7503P1C NDL7503PC N |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 1612A 1612B |
1310nm DFB Laser Module
|
EMCORE
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| ML7XX19 ML725B19F |
MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML725B45F ML725C45F ML7XX45 ML720Y45S ML720J45S ML |
1310nm InGaAsP FP LASER DIODES 1310 InGaAsP的FP激光二极管
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| 1241CADC 1241CAFC 1241CALC 1241CAPC 1241CAUC 1241C |
CAP.00033UF 16V PPS FILM 0603 2% 1241/1243/1245-Type非致冷激光发射器
Uncooled Laser Transmitter 非致冷激光发射器
1241/1243/1245-Type Uncooled Laser Transmitter 1241/1243/1245-Type非致冷激光发射器
CAP .033UF 16V PPS FILM 1206 2%
CAP CER 750PF 50V 5% C0G 0805
OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC.
|
Varitronix, Ltd.
Surge Components, Inc.
Littelfuse, Inc.
Agere Systems
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
